Stress-Driven Oxidation Chemistry of Wet Silicon Surfaces
نویسندگان
چکیده
منابع مشابه
Stress-driven oxidation chemistry of wet silicon surfaces
The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to rupture of Si-O bonds and producing reactive sites for attack by dissolved dioxygen or hydrogen peroxide molecules. Tensile strain is found to enhance the d...
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2008
ISSN: 1932-7447,1932-7455
DOI: 10.1021/jp804078n