Stress-Driven Oxidation Chemistry of Wet Silicon Surfaces

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Stress-driven oxidation chemistry of wet silicon surfaces

The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to rupture of Si-O bonds and producing reactive sites for attack by dissolved dioxygen or hydrogen peroxide molecules. Tensile strain is found to enhance the d...

متن کامل

Silicon surfaces : metallic character, oxidation and adhesion

2014 The existence of an ordered or disordered noble metal (Ag, Au) monolayer on the Si(111) surface has a great influence on the growth mode of metal atoms and the oxidation of the silicon surface atoms. These phenomena are discussed and it is suggested that they are both correlated to the more or less pronounced metallic character of the surface. J. Physique 44 (19$3) 707-711 JUIN 1983,

متن کامل

Parallel-local anodic oxidation of silicon surfaces by soft stamps.

We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps. This method yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surfa...

متن کامل

DNA microarrays on silicon surfaces through thiol-ene chemistry.

The potential of thiol-ene chemistry as a selective strategy to functionalize silicon materials for DNA microarraying is demonstrated and applied to discriminate genetic variations.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: The Journal of Physical Chemistry C

سال: 2008

ISSN: 1932-7447,1932-7455

DOI: 10.1021/jp804078n